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Product Data Sheet
December 13, 2001
36 to 40 GHz 1W Power Amplifier
* * * * * * *
TGA1171-SCC
0.25 um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38 GHz 14 dB Nominal Gain OTOI 36 dBm at 40 GHz typical Bias 6-7 V @ 500 mA Chip Dimensions: 2.863 mm x 2.740 mm x 0.1016 mm
Key Features and Performance
Primary Applications
* Point-to-Point Radio Point-to-Multipoint Radio
TGA1171 Fixture Data +7V, 500mA, 25C
20 15 Gain and Return Loss (dB) 10 5 0 -5 -10 -15 -20 -25 33 34 35 36 37 38 39 40 41 42 Frequency (GHz) S22 S11 S21
Product Description
The TriQuint TGA1171-SCC is a two-stage PA MMIC design using TriQuint's proven 0.25 m Power pHEMT process to support a variety of millimeter wave applications including point-to-point digital radio and pointto-multipoint systems. The balanced design consists of four 400 m input devices driving eight 400 m output devices. The TGA1171 provides 29 dBm of output power at 1 dB gain compression and >30 dBm saturated output power across 36-40 GHz with a typical small signal gain of 14 dB. Typical Input/Output RL is typically greater than 12-15 dB across the band. The TGA1171 requires minimal off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form.
*
TGA1171 Fixture Data +7V, 500mA, 25C
34 33 32 Output P1dB (dBm) 31 30 29 28 27 26 25 24 36.0 36.5 37.0 37.5 38.0 38.5 39.0 39.5 40.0
Frequency (GHz)
TriQuint Semiconductor Texas: (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
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Product Data Sheet
December 13, 2001
TGA1171-SCC
TABLE I MAXIMUM RATINGS Symbol V I
+ -
Parameter 5/ Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current (Quiescent) Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Value 8V -5V TO 0V 960 mA 56.32 mA 27 dBm 5.25 W 150 0C 320 C -65 to 150 0C
0
Notes 4/ 4/ 4/ 3/ 4/ 1/ 2/
V
+
| IG | PIN PD TCH TM TSTG 1/ 2/
These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (T M). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced from 9.5 E+6 to 6.1 E+5 hours. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. These ratings represent the maximum operable values for this device.
3/ 4/ 5/
TriQuint Semiconductor Texas: (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
2
Product Data Sheet
December 13, 2001
TGA1171-SCC
TABLE II DC PROBE TEST (TA = 25 C 5 C) Symbol Idss (Q3-6) Gm(Q3-6) VP BVGS(Q3-6) BVGD(Q3-6) Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage GateSource Breakdown Voltage GateDrain Minimum 160 352 -1.5 -30 -30 Maximum 752 848 -0.5 -11 -11 Unit mA mS V V V
TABLE III AUTOPROBE FET PARAMETER MEASUREMENT CONDITIONS
FET Parameters
IDSS : Maximum drain current (IDS) with gate voltage (VGS) at zero volts.
Test Conditions
VGS = 0.0 V, drain voltage (VDS) is swept from 0.5 V up to a maximum of 3.5 V in search of the maximum value of IDS; voltage for IDSS is recorded as VDSP. For all material types, VDS is swept between 0.5 V and VDSP in search of the maximum value of Ids. This maximum IDS is recorded as IDS1. For Intermediate and Power material, IDS1 is measured at VGS = VG1 = -0.5 V. For Low Noise, HFET and pHEMT material, VGS = VG1 = -0.25 V. For LNBECOLC, use VGS = VG1 = -0.10 V. VDS fixed at 2.0 V, VGS is swept to bring IDS to 0.5 mA/mm. Drain fixed at ground, source not connected (floating), 1.0 mA/mm forced into gate, gate-to-drain voltage (VGD) measured is VBVGD and recorded as BVGD; this cannot be measured if there are other DC connections between gatedrain, gate-source or drain-source. Source fixed at ground, drain not connected (floating), 1.0 mA/mm forced into gate, gate-to-source voltage (VGS) measured is VBVGS and recorded as BVGS; this cannot be measured if there are other DC connections between gatedrain, gate-source or drain-source.
Gm : Transconductance;
(I
DSS
- IDS 1
)
VG1
VP : Pinch-Off Voltage; VGS for IDS = 0.5 mA/mm of gate width. VBVGD : Breakdown Voltage, Gate-to-Drain; gate-to-drain breakdown current (IBD) = 1.0 mA/mm of gate width.
VBVGS : Breakdown Voltage, Gate-to-Source; gate-tosource breakdown current (IBS) = 1.0 mA/mm of gate width.
TriQuint Semiconductor Texas: (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
3
Product Data Sheet
December 13, 2001
TGA1171-SCC
TABLE IV RF WAFER CHARACTERIZATION TEST (TA = 25C + 5C) (Vd = 7V, Id = 500 mA 5%) Parameter Frequency Output P1dB Small Signal Gain Input Return Loss Output Return Loss Output TOI Unit GHz dBm dB dB dB dBm Min 36 26 12 Typical 29 14 -15 -15 36 Max 40
TABLE V THERMAL INFORMATION* Parameter RJC Thermal Resistance (channel to backside of carrier) Test Conditions Vd = 7V ID = 500 mA Pdiss = 3.5 W TCH (oC) 125.03 RJC (C/W) 15.79 TM (HRS) 9.5 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. * This information is a result of a thermal model analysis.
TriQuint Semiconductor Texas: (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
4
Product Data Sheet
December 13, 2001
TGA1171-SCC
Data Based on the 50th percentile On-Wafer RF Probe Test Results, Sample Size = 13971 Devices
Bias Conditions: Vd = 7 V, Id = 500 mA
32 31 30 Pout @ P1dB (dBm) 29 28 27 26 25 24 36 36.5 37 37.5 38 38.5 39 39.5 40 Frequency (GHz)
-10
-15 Input Return Loss (dB)
-20
-25
-30
-35
-40 36 36.5 37 37.5 38 38.5 39 39.5 40 Frequency (GHz)
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
5
Product Data Sheet
December 13, 2001
TGA1171-SCC
Data Based on the 50th percentile On-Wafer RF Probe Test Results, Sample Size = 13971 Devices
Bias Conditions: Vd = 7 V, Id = 500 mA
16
15
14 Gain (dB)
13
12
11
10 36 36.5 37 37.5 38 38.5 39 39.5 40 Frequency (GHz) -10 -12 Output Return Loss (dB) -14 -16 -18 -20 -22 -24 -26 36 36.5 37 37.5 38 38.5 39 39.5 40 Frequency (GHz)
TriQuint Semiconductor Texas: (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
6
Product Data Sheet
December 13, 2001
TGA1171-SCC
Mechanical Characteristics
2.740
1
1.900 1.690
1.050 0.840
1
0.000 0.000 0.270 0.625 2.260 2.415 2.660 1.385 2.863
Dimensions in mm RF Pads: 130x100 m DC Pads: 100x100 m Die Area: 7.845 mm2
TriQuint Semiconductor Texas: (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
7
Product Data Sheet
December 13, 2001
TGA1171-SCC
Add additional 1uF on drain bias lines for lab testing
Vg
Vd Vg Vd
.01uF, 2 PL
100pF, 2 PL
RF out RF in
5 chisel bonds or 3 mil ribbon 2PL
100pF, 2 PL
.01uF, 2 PL
Vg
Vd
Vg
Vd
Add additional 1uF on drain bias lines for lab testing
Chip Assembly and Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas: (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
8
Product Data Sheet
December 13, 2001
TGA1171-SCC
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas: (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
9

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